cascadable silicon bipolar mmic amplifier technical data features ? cascadable 50 w gain block ? 3 db bandwidth: dc to 4.0 ghz ? 12.5 dbm typical p 1 db at 1.0 ghz ? 8.5 db typical gain at 1.0 ghz ? unconditionally stable (k>1) ? hermetic gold-ceramic microstrip package MSA-0470 70 mil package description the MSA-0470 is a high perfor- mance silicon bipolar monolithic microwave integrated circuit (mmic) housed in a hermetic, typical biasing configuration c block c block r bias v cc > 7 v v d = 5.25 v rfc (optional) in out msa 4 1 2 3 high reliability package. this mmic is designed for use as a general purpose 50 w gain block. typical applications include narrow and broad band if and rf amplifiers in industrial and military applications. the msa-series is fabricated using agilents 10 ghz f t , 25 ghz f max , silicon bipolar mmic process which uses nitride self-alignment, ion implantation, and gold metalli- zation to achieve excellent performance, uniformity and reliability. the use of an external bias resistor for temperature and current stability also allows bias flexibility.
2 MSA-0470 absolute maximum ratings parameter absolute maximum [1] device current 100 ma power dissipation [2,3] 650 mw rf input power +13 dbm junction temperature 200 c storage temperature C65 to 200 c thermal resistance [2,4] : q jc = 115 c/w notes: 1. permanent damage may occur if any of these limits are exceeded. 2. t case = 25 c. 3. derate at 8.7 mw/ c for t c > 125 c. 4. the small spot size of this technique results in a higher, though more accurate determination of q jc than do alternate methods. see measure- ments section thermal resistance for more information. g p power gain (|s 21 | 2 ) f = 0.1 ghz db 7.5 8.5 9.5 d g p gain flatness f = 0.1 to 2.5 ghz db 0.6 1.0 f 3 db 3 db bandwidth ghz 4.0 input vswr f = 0.1 to 2.5 ghz 1.7:1 output vswr f = 0.1 to 2.5 ghz 2.0:1 nf 50 w noise figure f = 1.0 ghz db 6.5 p 1 db output power at 1 db gain compression f = 1.0 ghz dbm 12.5 ip 3 third order intercept point f = 1.0 ghz dbm 25.5 t d group delay f = 1.0 ghz psec 125 v d device voltage v 4.75 5.25 5.75 dv/dt device voltage temperature coefficient mv/ c C8.0 note: 1. the recommended operating current range for this device is 30 to 70 ma. typical performance as a function of current is on the following page. electrical specifications [1] , t a = 25 c symbol parameters and test conditions: i d = 50 ma, z o = 50 w units min. typ. max. vswr
3 MSA-0470 typical scattering parameters (z o = 50 w , t a = 25 c, i d = 50 ma) freq. ghz mag ang db mag ang db mag ang mag ang 0.1 .18 179 8.5 2.67 176 C16.4 .151 1 .10 C14 0.2 .18 179 8.5 2.67 172 C16.4 .151 2 .10 C30 0.4 .18 179 8.5 2.67 163 C16.4 .152 3 .13 C50 0.6 .17 C179 8.5 2.65 155 C16.2 .155 5 .16 C67 0.8 .16 C176 8.4 2.64 147 C16.1 .158 8 .19 C79 1.0 .16 C174 8.3 2.61 138 C15.9 .161 6 .22 C90 1.5 .16 C166 8.2 2.56 117 C15.5 .169 9 .29 C111 2.0 .21 C163 7.8 2.46 97 C14.6 .186 9 .33 C131 2.5 .26 C162 7.3 2.33 83 C13.8 .204 12 .36 C142 3.0 .32 C170 6.5 2.12 65 C13.5 .212 10 .40 C156 3.5 .37 C177 5.7 1.93 38 C13.2 .220 7 .40 C164 4.0 .40 175 4.7 1.73 33 C12.6 .234 3 .40 C170 4.5 .41 166 3.9 1.57 20 C12.4 .239 C1 .39 C173 5.0 .42 155 3.1 1.44 7 C11.9 .255 C6 .37 C176 a model for this device is available in the device models section. s 11 s 21 s 12 s 22 typical performance, t a = 25 c (unless otherwise noted) 0.1 0.3 0.5 1.0 3.0 6.0 0 2 4 6 8 10 12 g p (db) figure 1. typical power gain vs. frequency, t a = 25 c, i d = 50 ma. gain flat to dc v d (v) figure 2. device current vs. voltage. 0 20 40 60 80 i d (ma) 234567 1 t c = +125 c t c = +25 c t c = ?5 c i d (ma) figure 3. power gain vs. current. 4 5 6 7 8 9 g p (db) 20 40 50 60 70 30 5 6 7 8 9 11 10 12 13 p 1 db (dbm) g p (db) temperature ( c) figure 4. output power at 1 db gain compression, nf and power gain vs. case temperature, f = 1.0 ghz, i d =50ma. p 1 db ?5 ?5 +25 +85 +125 g p nf nf (db) 5 6 7 8 0.1 0.2 0.3 0.5 2.0 1.0 4.0 frequency (ghz) figure 5. output power at 1 db gain compression vs. frequency. 3 6 9 12 15 18 21 p 1 db (dbm) i d = 70 ma i d = 30 ma i d = 50 ma 6.0 5.5 6.5 7.0 7.5 nf (db) frequency (ghz) figure 6. noise figure vs. frequency. 0.1 0.2 0.3 0.5 2.0 1.0 frequency (ghz) i d = 30 ma i d = 50 ma i d = 70 ma 0.1 ghz 1.0 ghz 2.0 ghz
www.semiconductor.agilent.com data subject to change. copyright ? 1999 agilent technologies obsoletes 5965-9576e 5966-4952e (11/99) 70 mil package dimensions 1 3 4 2 ground ground rf output and bias rf input .020 .508 .070 1.78 .495 .030 12.57 .76 notes: (unless otherwise specified) 1. dimensions are in 2. tolerances in .xxx = 0.005 mm .xx = 0.13 mm .040 1.02 .035 .89 .004 .002 .10 .05
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